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Philips Semiconductors
Product data sheet
NE1619
HECETA4 Temperature and voltage monitor
2004 Oct 05
8
DC ELECTRICAL CHARACTERISTICS
V
DD
 = 3.3 V (see Note 4); T
amb
 = 0 癈 to +125 癈 unless otherwise specified.
SYMBOL
PARAMETER
CONDITION
MIN.
TYP.
MAX.
UNIT
V
DD
Supply voltage
2.8
3.3
5.5
V
I
DD
Supply current
Standby mode

100

礎
I
DD
Supply current
Operating mode

250
500
礎
t
C
Total monitoring cycle time
1
All conversions

0.25
0.50
sec
T
R
Temperature resolution
Local and Remote

?.0

癈
p
T
amb
 = 25 癈


?.0
癈
T
AI
Internal temperature accuracy
T
amb
 = 0 癈 to +120 癈


?.0
癈
p
T
amb
 = 25 癈


?.0
癈
T
AE
External temperature accuracy
T
amb
 = 0 癈 to +120 癈


?.0
癈
High level

100

礎
I
S
Remote source current
Low level

10

礎
Voltage-to-Digital converter (12V
IN
, 5V
IN
, 3.3V
IN
, 2.5V
IN
, V
CCP
, V
DD
)
VUE
Unadjusted error


?.0
%FS
VDNL
Differential non-linearity error

?.0

LSB
VRIN
V
IN
 input resistance
100
200

k&
VPSS
V
IN
 power supply sensitivity

?.0

%/V
Digital output (SDA, A0
2
)
V
OH
Output High voltage
I
OUT
 = 3.0 mA, V
DD
 = 2.8 V


2.4
V
V
OL
Output Low voltage
I
OUT
 = 3.0 mA, V
DD
 = 3.8 V
0.4


V
I
OH
Output High leakage current
V
OUT
 = V
DD

0.1
10.0
礎
SMB digital input voltages (SDA, SCL)
V
IH
Input High voltage


0.6V
DD
V
V
IL
Input Low voltage


0.3V
DD
V
Digital input voltages (A0, VID04, NT_IN
3
)
V
IH
Input High voltage


2.0
V
V
IL
Input Low voltage
0.4


V
Digital input current (all digital inputs)
I
IH
Input High current
V
IN
 = V
DD
1.0


礎
I
IL
Input Low current
V
IN
 = GND


1.0
礎
C
IN
Input capacitance

20.0

pF
NOTES:
1.  Total monitoring cycle time includes all temperature conversions and all voltage conversions.
2.  When A0 is selected as output in NAND-TREE test mode.
3.  When D is selected as input in NAND-TREE test mode.
4.  Operating the device at 2.8 V to 5.5 V is allowed, but parameter values in characteristics table are not guaranteed.
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